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| SMD Type P-Channel 2.5-V (G-S) MOSFET KI5441DC IC IC Features TrenchFET Power MOSFET 2.5-V Rated Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 Pulsed Drain Current Continuous Source Current * Maximum Power Dissipation * TA = 25 TA = 85 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) * Surface Mounted on 1" X 1' FR4 Board. t 5 sec Symbol RthJA RthJF Typ 40 80 15 TJ, Tstg )* TA = 25 TA = 85 IDM IS PD -2.1 2.5 1.3 -55 to 150 260 Max 50 95 20 /W Unit Symbol VDS VGS ID -5.3 -3.8 -20 -1.1 1.3 0.7 W 5 secs Steady State -20 12 -3.9 -2.8 A Unit V Steady-State Steady-State www.kexin.com.cn 1 SMD Type KI5441DC Electrical Characteristics Ta = 25 Parameter Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current* Symbol VGS(th) IGSS IDSS ID(on) Testconditons VDS = VGS, ID = -250 A VDS = 0 V, VGS = 12 V Min -0.6 Typ Max -1.0 100 -1 -5 -20 0.046 0.05 0.07 12 -0.8 11 VDS = -10V, VGS = -4.5 V, ID = -3.9 A 3.0 2.5 20 VDD = -10 V, RL = 10 ID = -1 A, VGEN = -4.5V, RG = 6 35 65 45 IF = -1.1 A, di/dt = 100 A/ s 30 30 55 100 70 60 -1.2 22 0.055 0.06 0.083 IC IC Unit V nA A A A VDS = -20V, VGS = 0 V VDS = -20V, VGS = 0 V, TJ = 85 VDS - 5 V, VGS = -4.5 V VGS = -4.5 V, ID = -3.9A Drain-Source On-State Resistance* rDS(on) VGS = -3.6 V, ID = -3.7A VGS = -2.5 V, ID = -3.1A Forward Transconductance* Schottky Diode Forward Voltage* Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time * Pulse test; pulse width 300 s, duty cycle gfs VSD Qg Qgs Qgd td(on) tr td(off) tf trr 2%. VDS = -10 V, ID = -3.9A IS = -1.1 A, VGS = 0 V S V nC nC nC ns ns ns ns ns 2 www.kexin.com.cn |
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